Comparison between CB, CE and CC configurations
Characteristics |
CE configuration |
CB configuration |
CC configuration |
---|---|---|---|
Input resistance |
Low (50 KΩ) |
Very low (40 Ω) |
Very high (750 KΩ) |
Output resistance |
High (10 KΩ) |
Very high (1 MΩ) |
Low (50 Ω) |
Current Gain |
High (100) |
Less than unity (0.98) |
High (100) |
Input voltage |
Applied between base and emitter. |
Applied between emitter and base. |
Applied between base and collector. |
Output voltage |
Applied between `emitter and collector. |
Applied between collector and emitter. |
Applied between emitter and ground. |
Leakage current |
Very large. For Germanium 500 µA and for silicon 20 µA. |
Very less. For Germanium 5 µA and for silicon 1 µA. |
Very large. For Germanium 500 µA and for silicon 20 µA. |
Voltage Gain |
High (500) |
Small (150) |
Less than unity |
Applications |
Used in amplifier circuits. |
Used for high-frequency applications. |
Used for impedance matching. |
BJT Configurations
A transistor is also called as bipolar junction transistor or simply BJT. It is called as bipolar as only two types of charge carriers, i.e. majority charge carriers and minority charge carriers are required to perform the operations on transistor. BJT is a current-controlled device as the output voltage, current or power is controlled by the input current in the transistor. As we know, BJT is a three-terminal device , so the three configurations- we will study in this article. The three main configurations are – common emitter , common base and common collector , which has its unique characteristics and applications respectively.
Table of Content
- What is BJT?
- Configurations
- Operating regions of transistor
- Advantages
- Disadvantages
- Applications
- Comparison between CB, CE and CC configurations