Current Flow in PN Junction diode
When the voltage is increased, electrons move from the n-side to the p-side of the junction. The migration of holes from the p-side to the n-side of the junction occurs in a similar manner as the voltage rises. As a result, a concentration gradient exists between the terminals on both sides.
There will be a movement of charge carriers from higher concentration regions to lower concentration regions as a result of the development of the concentration gradient. The current flow in the circuit is caused by the movement of charge carriers inside the p-n junction.
PN Junction Diode
The electrical conductivity of a semiconductor material is between that of a conductor, such as metallic copper, and that of an insulator, such as glass. Its resistivity decreases as the temperature rises, whereas metals have the reverse effect. By adding impurities (doping) into the crystal structure, its conducting characteristics can be changed in beneficial ways. Diodes, transistors, and most contemporary electronics are built on the behaviour of charge carriers such as electrons, ions, and electron holes at these junctions.
Silicon, germanium, gallium arsenide, and elements along the periodic table’s so-called metalloid staircase are examples of semiconductors. Gallium arsenide is the second most common semiconductor after silicon, and it is used in laser diodes, solar cells, microwave-frequency integrated circuits, and other applications. Silicon is a crucial component in the production of most electrical circuits.